N-type or P-type 125mm silicon wafer can be supplied with the orientation of <111> or <100>. More specs are shown as following:
1. 125mm Silicon Substrate Wafer List
No. 1
ID
Dia
Type
Dopant
Ori
Res
(Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2683
125mm
N
As
<111>
<0.0035
375um
SSP
MECH
Mechanical Grade. EPI Layer: N/Phos Res: 4.59-5.874ohm.cm 12-16um
PAM2684
125mm
N
P
<100>
<0.001
3000um
SSP
Test
3mm thick
PAM2685
125mm
P
B
<111>
43485
525-575um
SSP
Test
Sold As-Is
PAM2686
125mm
P
B
<111>
43485
500-550um
SSP
Test
Sold As-Is
No. 2
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
(Ωcm)
Comment
PAM2687
p-type Si:B
[100]
5″
889 [...]
2019-02-20meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 525 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter), [...]
2019-06-28meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]
2019-03-07meta-author
PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab(USA),University of California, [...]
2019-10-29meta-author