PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm
Silicon ingot, per SEMI, G Ø76mm
FZ n-type Si:P[100]±2.0°
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25meta-author
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been [...]
2019-11-11meta-author
PAM XIAMEN offers Photographic Film Letterpress
Accuracy Index
Accuracy/Grade
Accuracy1
Accuracy2
Line Number/Aperture Rate
400dpi/50%
350dpi/50%
Dot arrangement, Dot shape
45°/60°/75°/circle
45°/60°/75°/circle
Dimensional Accuracy
±0.085mm
±0.085mm
Substrate Thickness
1.50mm±0.15mm
1.50mm±0.15mm
Cutting Accuracy
±1mm
±1mm
Main application areas:
LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-04meta-author
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Highlights
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]