Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP₂-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP₂-annealed SI InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP₂-annealed SI InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the SI InP suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the SI InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2019-11-11

Related Posts

NACL SODIUM CHLORIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers NaCl Sodium Chloride Crystal Substrates. Sodium Chloride (NaCl) Crystal Substrates Main Parameters Crystal structure Face-centered cubic Fm3m, No. 225, a=5.64Å Growth method crystallization process Density 2.165 g/cm3 Melting Point 801 [...]

2019-03-14meta-author

Origin, modeling and suppression of grinding marks in ultra precision grinding of silicon wafers

A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]

2013-09-13meta-author grinding marks silicon wafers

Why Wafer Thinning Is Required?

From the perspective of the cross-sectional structure of integrated circuits, most integrated circuits are fabricated on the shallow surface layer of the silicon base material. Due to the requirements of the manufacturing process, high requirements are placed on the dimensional accuracy, geometric accuracy, surface [...]

2022-06-13meta-author

3″ Silicon EPI Wafer-1

PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+ 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+ 3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+ 3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+ 3″Øx381μm n- [...]

2019-03-08meta-author

GaAs HEMT epi wafer

PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer ( PAM200416-HEMT): [...]

2013-11-19meta-author GaAs HEMT epi wafer

4″ FZ Prime Silicon Wafer-4

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm, TTV<5μm, Bow<20μm, Warp<30μm, One-side-Epi-Ready-polished, back-side etched, SEMI Flats, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our [...]

2019-07-05meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.