PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-05meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
PAM XIAMEN offers Stainless Steel Substrate ( Polycrystaline) .
Stainless Steel Substrate: 1″ Dia x 0.3 mm, as cold rolling
Substrate dimension: 25.4 diameter x 0.3 mm thickness, ( 1″ Dia. x0.3 mm)
Properties
Yield Strength:(N/mm2)≥205
Tensile strength :≥520
Elogation: (%)≥40
Density : 7.93 g·cm-3
Resistivity: 0.73 Ω·mm2·m-1 [...]
2019-04-19meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2434
p–type Si:B
[110] ±0.25°
4″
525
P/E
5–10
SEMI Prime, 2Flats, Empak cst
PAM2435
p–type Si:B
[110] ±0.5°
4″
380
P/P
1–30
SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
PAM2436
p–type Si:B
[110] ±0.5°
4″
750
P/E
1–100
SEMI Prime (back–side [...]
2019-02-19meta-author