Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
3″
300
P/P
0.3-0.4
SEMI Prime
p-type Si:B
[111]
3″
250
P/E
0.10-0.12
SEMI Prime
p-type Si:B
[111]
3″
300
P/E
0.03-0.04
SEMI Prime
p-type Si:B
[111]
3″
380
P/E
0.014-0.015
SEMI Prime
p-type Si:B
[111-1°]
3″
1000
P/E
0.014-0.016
SEMI Prime
p-type Si:B
[111]
3″
600
P/P
0.005-0.020
SEMI Prime
p-type Si:B
[111-3.5°]
3″
380
P/E
0.004-0.005
SEMI Prime
n-type Si:P
[510]
3″
1000
P/E/P
5-10
Prime, NO Flatst
n-type Si:P
[100]
3″
9500
P/E
15-22
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
300
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
380
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
3000
P/E/P
10-12
Prime, NO Flats, Individual cst
n-type Si:P
[100]
3″
1000
P/E
6-10
Prime, NO Flatst
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
300
P/P
1-20
SEMI Prime
n-type Si:P
[100]
3″
345
P/P
1-100
SEMI
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type [...]
2019-03-06meta-author
Silicon-based devices are approaching physical limits, and compound semiconductors have broad prospects. Meanwhile, in some high-power, high-voltage, high-frequency, and high-temperature applications (such as new energy and 5G communications), the performance of silicon-based devices has gradually failed to meet the requirements. Due to the excellent [...]
2022-05-13meta-author
Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV light while has a wide transmission range in infrared band. Infrared grade germanium single crystal is the basic material for making infrared lenses, infrared window [...]
2021-09-18meta-author
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author