The photoluminescent germanium nanocrystals (Ge-NCs) were successfully incorporated into electrospun polymeric nanofiber matrix in order to develop photoluminescent nanofibrous composite web. In the first step, the synthesis of Ge-NCs was achieved by nanosecond pulsed laser ablation of bulk germanium wafer immersed in organic liquid. The size, [...]
PAM XIAMEN offers Lead-Tungstate Crystals PbWO4.
PRODUCT DESCRIPTION FOR LEAD-TUNGSTATE CRYSTALS
Lead Tungstate (PbWO4) crystal is a scintillator which has been used as the detect material by several high energy physics devices, e.g., CMS detector in CERN. The crystal is distinguished by its fast decay time, high density [...]
2019-03-14meta-author
Polarization degree and vector angle effects on a CdZnTe focal plane performance
To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]
CZT Planar Detector
PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine.
1.Specification [...]
2019-04-23meta-author
In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
2019-12-30meta-author
A Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-SI
Dimension
5 x 10 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 10 6Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
