Niobium( Nb) substrate ( Polycrystalline)

  • Home
  • News
  • Niobium( Nb) substrate ( Polycrystalline)

Niobium( Nb) substrate ( Polycrystalline)

PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline).

Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished

Niobium( Nb) substrate ( Polycrystalline)
Purity:  99.5%
Size:     10x10x0.5 mm
Surface finish:  One side optical polished
Surface finish (RMS or Ra) :  N/A

General Properties  for Niobium
Symbol                                 Nb
Atomic Number                      41
Atomic Weight:                     178.49
Density (kg m-3) :             8578 
Relative atomic mass：  92.906  
Melting Point:                          2477 oC
Boiling Point:                           4744 oC

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-05-08

Share this post

Related Posts

Low Lattice Mismatch of Gallium Nitride on Silicon Carbide Substrates

The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]

2021-04-26meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer

PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer: Description Growth Method — MCZ Single crystal size inch 2 – 8 Conductivity Type — N P Doped elements — P/Sb B Crystal Orientation — <111> <110> <100> <111> <110> <100> Resistivity Ω.cm 0.0015-100 0.001-100 RRG % 20 20 Oxygen Concentration atoms/cm3 1.00E+18 1.00E+18 Carbon Concentration atoms/cm3 5.00E+16 5.00E+16 Diameter mm 55-157 55-157 Length mm 50-500 50-500 Dislocation EA/cm2 N/A N/A Swirl(After Oxidation) — N/A N/A Remarks：The above parameters can be customized.   FAQ about MCZ Silicon Wafers Q：This is just a curiosity, but let me ask about the production method of [...]

2019-02-27meta-author
Silicon Wafers for Direct Radioactive Nuclide-to-Electricity Experiments

PAM XIAMEN offers Silicon Wafers. Our clients have purchased the following wafers for the experiments above: Silicon 76.2mm P /B <100> 0-100 406-480um SSP Silicon 76.2mm N /P <100> 0-100 406-480um SSP For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, [...]

2019-02-26meta-author
LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. [...]

2013-10-11meta-author
The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]

2020-03-09meta-author
What will Affect the Quality of SiC Wafer Slicing?

Silicon carbide (SiC) wafer are available, for more wafer information please click https://www.powerwaywafer.com/sic-wafer. The performance of SiC wafer slicing determines the processing level of subsequent thinning and polishing. Slicing is prone to cracks on the surface and subsurface of the SiC wafer, increasing the [...]

2022-08-05meta-author