PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2121
p-type Si:B
[110]
2″
380
P/P
FZ 130–160
1 F @ <111> only
PAM2122
p-type Si:B
[110]
2″
280
P/E
FZ 120–300
1 F @ <111> only
PAM2123
p-type Si:B
[100]
2″
300
P/P
FZ 400–1,000
Prime, NO Flats, hard cst
PAM2124
p-type Si:B
[100]
2″
300
P/E
FZ >50
SEMI Prime, 2Flats, hard cst
PAM2125
p-type Si:B
[111]
2″
300
P/E
FZ 730–1,050
SEMI Prime, [...]
2019-02-18meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs wafer, offers low-temperature grown gallium arsenide on GaAs substrate wafer. Our LT-GaAs epi layer has excellent properties, GaAs films with LT-GaAs layers were grown by molecular beam epitaxy (MBE) method at a low temperature substrate. The grown structures were [...]
2017-08-30meta-author
In this work we execute computational calculations to investigate the structural, electronic and magnetic properties of the GaN/MnN/GaN and MnN/GaN/MnN interlayers. The calculations were carried out by a method based on pseudopotentials, as implemented in the Quantum ESPRESSO code. For the description of the [...]
2019-09-27meta-author
SiC wafers are available for power electronics, scientific or industrial applications, specifications as: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html
SiC is a binary compound formed in a 1:1 ratio of Si and C elements, consisting of 50% silicon (Si) and 50% carbon (C). Its basic structural unit is the Si-C [...]
2024-03-21meta-author
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals.
PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
2019-03-15meta-author
Undoped InP Wafer
PAM-XIAMEN offer low doped InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
[...]
2020-03-18meta-author