Silicon Carbide List
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-350-A
4″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-100-N-SIC-350-B
4″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-100-N-SIC-350-D
4″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-100-N-SIC-370-L
4″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-100-N-SIC-440-AC
4″ 4H-N
0°/4°±0.5°
440±25um
D
*
As-cut
>75%
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
3″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-76-N-SIC-350-A
3″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-N-SIC-350-B
3″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-N-SIC-350-D
3″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-76-N-SIC-370-L
3″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-76-N-SIC-410-AC
3″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-76-N-SIC-C0510-AC-D
3″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-D
3″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C0510-AC-C
3″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-C
3″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S4H-76-SI-SIC-350-A
3″ 4H-SI
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-SI-SIC-350-B
3″ 4H-SI
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-SI-SIC-350-D
3″ 4H-SI
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
2″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-51-N-SIC-330-A
2″ 4H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S4H-51-N-SIC-330-B
2″ 4H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S4H-51-N-SIC-330-D
2″ 4H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S4H-51-N-SIC-370-L
2″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-51-N-SIC-410-AC
2″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-51-N-SIC-C0510-AC-D
2″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-D
2″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C0510-AC-C
2″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-C
2″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
2″ 6H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S6H-51-N-SIC-330-A
2″ 6H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-N-SIC-330-B
2″ 6H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-N-SIC-330-D
2″ 6H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-N-SIC-370-L
2″ 6H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-N-SIC-410-AC
2″ 6H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-N-SIC-C0510-AC-D
2″ 6H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-D
2″ 6H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C0510-AC-C
2″ 6H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-C
2″ 6H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S6H-51-SI-SIC-330-A
2″ 6H-SI
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-SI-SIC-330-B
2″ 6H-SI
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-SI-SIC-330-D
2″ 6H-SI
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-SI-SIC-370-L
2″ 6H-SI
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-SI-SIC-410-AC
2″ 6H-SI
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-SI-SIC-C0510-AC-D
2″ 6H-SI
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-SI-SIC-C1015-AC-D
2″ 6H-SI
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
Please see below sub-catalogue:
6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer
As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Ultra Flat Wafer Ultra Thin Wafer
We improve wafer thickness uniformity (TTV) through wafer thinning services and chemical mechanical polishing (CMP) services, which transfer wafers (such as LN, LT, silicon and quartz) to ultra-flat or ultra-thin wafers. We can produce ultra-flat silicon wafers, ultra-flat quartz wafers, ultra-thin LN wafers, ultra-thin [...]
2018-08-22meta-author
Ge Wafer Substrate-Germanium
No.
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
(mm)
(μm)
Ω·cm
Orientation
/cm2
1-100
Ge
(100)
50.8
500±25
SSP
0.0138-0.02
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500
SSP
≥30
N/undoped
N/A
N/A
<5A
1-100
Ge
(100)
50.8
500
SSP
58.4-63.4
N/undoped
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-1
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
1000
DSP
>30
N/A
(110)
N/A
N/A
1-100
Ge
(100)
50.8
2000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
4000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(111)/(110)
50.8
200000
N/A
5-20
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
400
SSP
<0.4
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
50.8
4000±10
DSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
350
SSP
1-10
P/Ga
(110)
≤5000
N/A
PAMP20295
Ge
(100)
50.8
500±25
SSP
2-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
N/Sb
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
P/Ga
(110)
≤5000
N/A
1-100
Ge
(111)
60
1000
As cut
>30
N/A
(110)
<3000
N/A
1-100
Ge
(100)
100
N/A
SSP
<0.019
P/Ga
(110)
<500
N/A
1-100
Ge
(100)
100
1000±25
SSP
≥30
N/undoped
N/A
N/A
N/A
1-100
Ge
(100) off 6°or off 9°
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)
100
500
DSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)6°off (111)
100
185±15
DSP
0.01-0.05
N/A
(110)
≤5000
<5A
1-100
Ge
(100)6°off (110)
100
525±25
SSP
0.01-0.04
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
1000±15
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
750±25
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
500±25
SSP
10-30
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(111)
100
500±25
SSP
<0.4
N/Sb
N/A
N/A
N/A
1-100
Ge
(100)6°off-cut toward(111)A
100
175±25
SSP
0.003-0.009
P/Ga
(0-1-1) (0-11)
<100
N/A
PAM210802
Ge
(100)
100
175
DSP
<0.02
P
N/A
N/A
N/A
1-100
Ge
(310)±0.1°
100
200±15
DSP
>20
N/A
N/A
N/A
N/A
1-100
Ge
(111)
150
600-700
N/A
>30
N/A
(110)
N/A
N/A
Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial [...]
Substrates for III-V nitride Film Deposition
Crystal
Structure
M.P.
Density
Lattice Mis-match to GaN
Thermal Expansion
Growth Tech. .& Max size
Standard substrate size (mm)
oC
g/cm3
(10-6/k)
SiC
(6H as example)
Hexagonal
~2700
3.21
3.5 % atori.
10.3
CVD
Ø2″ x 0.3,Ø3″x0.3
a=3.073 Å
20x20x0.3,15x15x0.3
c=15.117 Å
Ø3“
10x10x0.3,5x5x0.3
subl.
1 side epi polished
Al2O3
Hexagonal
2030
3.97
14% atori.
7.5
CZ
Ø50 x 0.33
a=4.758 Å
Ø25 x 0.50
c=12.99 Å
Ø2”
10x10x0.5
1 or 2 sides epi polished
LiAlO2
Tetragonal
1900 ~
2.62
1.4 % atori.
/
CZ
10x10x0.5
a=5.17 Å
Ø20 [...]
2018-07-10meta-author
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
P/ZnO
N/A
N/A
N/A
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth [...]
Silicon Nitride Wafer Si3N4 Thin Film By LPCVD
In Stock, But Not Limited To The Following.
Wafer No.
Wafer Size
Polished-Side
Type/Orientation
Si3N4 Thickness
Wafer Thickness(um)
Resistivity(Ohm.Cm)
Quantity(Pcs)
PAM-XIAMEN-WAFER-#N1
2″
DSP, both Si3N4
N100
200nm
400±15
3-6
25
PAM-XIAMEN-WAFER-#N2
2″
SSP,both Si3N4
P100
200nm
400±15
<0.0015
24
PAM-XIAMEN-WAFER-#N3
2″
Si3N4 with Cu
48.8*3mm
—
—
—
1
PAM-XIAMEN-WAFER-#N4
3″
DSP, both Si3N4
—
150nm
—
—
2
PAM-XIAMEN-WAFER-#N5
4″
SSP,both Si3N4
N100
40nm
500±10
<0.02
2
PAM-XIAMEN-WAFER-#N6
4″
DSP, both Si3N4
N100
50nm
510-540
2-4
9
PAM-XIAMEN-WAFER-#N7
4″
DSP, both Si3N4
P type
50nm
200±10
<0.02
5
PAM-XIAMEN-WAFER-#N8
4″
SSP,both Si3N4
N100
95nm
525±15
1-10
22
PAM-XIAMEN-WAFER-#N9
4″
SSP,both Si3N4
N100
100nm
500±10
<0.05
7
PAM-XIAMEN-WAFER-#N10
4″
DSP, both Si3N4
P100
200±20nm
300±10
5-10
50
PAM-XIAMEN-WAFER-#N11
4″
DSP, both Si3N4
N100
100nm
200±15
1-15
19
PAM-XIAMEN-WAFER-#N12
4″
DSP, both Si3N4
P100
150nm
500±25
10-20
1
PAM-XIAMEN-WAFER-#N13
4″
SSP,both Si3N4
P100
200nm
525±25
10-20
25
PAM-XIAMEN-WAFER-#N14
4″
SSP,both Si3N4
P type
200nm
500±10
<0.05
15
PAM-XIAMEN-WAFER-#N15
4″
DSP, both [...]
2019-11-27meta-author