Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1
Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range? A: We can offer misorientation in low degree, no problem.
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand? A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin [...]
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