PAM XIAMEN offers 3″ CZ Si Lapped Wafer
3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat
For more information, send us email at [email protected] and [email protected]
2021-01-06meta-author
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6
Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Lifetime>1000µsec
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Orientation[110]±0.5°
Resistivity>5,000 Ωcm
TTV<10µm
Bow/Warp<40µm
Primary Flat [email protected][111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat [email protected][111]70.5° CW from primary flat
Front side finish [...]
2019-09-20meta-author
Indium gallium arsenide (InGaAs) sensors are supplied by PAM-XIAMEN, a InGaAs sensor manufacturer. Its working principle is actually the principle of shortwave infrared (SWIR). And the working principle of SWIR-based sensor is similar to that of CMOS-based sensor, converting photons into electrons. SWIR technology [...]
2021-07-15meta-author
mproved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers
Improved process control, lowered costs and reduced risks can be realized through the use of non-destructive mobility and sheet charge density [...]
PAM XIAMEN offers CERIUM FLUORIDE CEF3 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Cerium fluoride, CeF3, is a good scintillation crystal with high density and short decay time. Cerium fluoride crystal is a good material in measurement [...]
2019-03-11meta-author
Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified [...]