Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
2018-06-19meta-author
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
2018-06-19meta-author
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
2018-06-19meta-author
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide?
A: Sure.
2018-06-19meta-author
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
2018-06-19meta-author