Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?
A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)? A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
Q: Could you please provide information about standard epi structure of InGaAsP/InP wafer? A: Here we only can offer you general structure: Layer Material 6 InP 5 GaInAs 4 GaInAsP 3 InP 2 AlGaInAs MQW PL 1500-1560nm 1 InP buffer InP substrate
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
