PAM XIAMEN offers 650nm laser diode wafers.
650nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaInP and undoped AlGaInP d~1.5μm
Undoped GaInP QW PL:640+-5nm
Undoped AlGaInP and N- AlGaInP , d~2.2μm
N GaAs substrate N=(0.4~4)×10^18 d=350~625μm (100) 10°off <111>A
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.