

PAM XIAMEN offers 2″ Silicon Oxide Wafer 2″ Silicon Oxide Wafer Diameter (mm): 50mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100-200 SEMI Prime p-type Si:B [100] 3″ 380 P/E FZ 7,000-10,000 SEMI Prime p-type Si:B [100] 3″ 350 P/P FZ 1-5 SEMI Prime p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5-10.0 SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee p-type Si:B [100] 3″ 890 ±13 P/P FZ 0.5-10.0 SEMIt, TTV<8μm p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000-10,000 SEMI TEST (has scratches), in hard cst p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, TTV<5μm p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime n-type Si:P [100] 3″ 380 P/P FZ 7,000-18,000 SEMI Prime n-type [...]
Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC Published by: Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama; a Graduate School of [...]
Atomic Layer Deposition (ALD), also known as atomic layer epitaxy (ALE), is an atomic-scale thin film preparation technology. It can deposit ultra-thin films with uniform thickness, controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices [...]
Abstract We report on a systematic study of local structural, magnetic and magneto-optical properties of Mn-doped SiC films synthesized on a 3C–SiC(001) homoepitaxial wafer by an annealing method. A thin Mn layer was deposited on the SiC wafer, and then annealing was performed to diffuse [...]