

25.4 (1 inch) Silicon Wafers PAM XIAMEN offers 1″ silicon wafers. If you don’t see what you need, pleaes email us your specs and quantity. Item Dia Thickness (um) Orientation Type Dopant Resistivity (Ohm-cm) Polish Remark PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um. PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”. PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, [...]
PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 76.2 N Phos CZ -100 1-20 43768 P/P PRIME 76.2 N Phos CZ -100 1-20 40-60 P/P PRIME 76.2 N Phos CZ -100 1-20 80-100 P/P PRIME 76.2 N Phos CZ -100 1-20 140-160 P/P PRIME 76.2 N Phos FZ -100 >3000 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/E PRIME 76.2 N Phos CZ -100 350-400 P/E/OX PRIME 76.2 N As CZ -100 .001-.005 350-400 P/E PRIME 76.2 N Sb CZ -100 .005-.02 350-400 P/E PRIME 76.2 N Phos FZ -100 >3000 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/WTOx 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 400-450 P/E PRIME 76.2 N Phos CZ -100 450-500 P/P PRIME 76.2 N Phos CZ -100 500-550 P/E PRIME 76.2 N Phos CZ -100 950-1000 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
PAM XIAMEN offers InP Indium Phosphide Crystal Substrates. Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types. [...]
PAM XIAMEN offers Cleaving Silicon Wafers. Cleaving (100) silicon wafers Cleaving (111) silicon wafers For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″{100.0±0.2}Ø×500±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]