Photomask blank with antireflective chromium is available. Photomasks are mainly used in integrated circuits, flat panel displays (including LCD, LED, OLED), printed circuit boards and other fields. The photomask is a pattern master used in the photolithography process in microelectronics manufacturing. Here are specifications [...]
2021-11-09meta-author
Will the Novel Coronavirus-caused Pneumonia affect the company Resumption?
Post by PAM-XIAMEN, Feb.11,2020
The novel coronavirus-caused pneumonia affect the company resumption in short term, but not too much, as currently the epidemic is under control well by quarantine measures. Currently the reworking rate is >=75%, estimate [...]
2020-02-11meta-author
PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html.
The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field [...]
2024-04-17meta-author
Credit: MSU
A university-built small satellite known as the Cosmic X-Ray Background NanoSat-2 (CXBN-2) is being prepared for an ambitious upcoming science mission. The spacecraft – scheduled for launch into space on March 19 – is expected to deliver crucial data that could advance our [...]
2017-08-09meta-author
Cree Recalls 112,500 LED T8 Tube Lights in North America Over Burn Hazard
Recall date: AUGUST 25, 2016
Recall number: 16-252
Recall Summary
Name of product:
Cree® LED T8 Replacement Lamps
Hazard:
The recalled lamps can overheat and melt, posing a burn hazard.
Cree LED tube lights being recalled in North America. (Cree/LEDinside)
Remedy:
View Details
Refund
Consumer [...]
2016-08-30meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author