PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P+
100
57,5 ± 2,5
100 ± 1
0.0 ± 5.0 °
0.001 – 100 Ohmcm
150 ± 0.5 mm
675 ± 200 µm
100
20
100
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5 °
> [...]
2019-02-25meta-author
PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.
1. Specifications of SiC Ingots
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ [...]
2018-08-07meta-author
PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support multi-energy-region test. It can [...]
2019-04-24meta-author
Gallium arsenide single crystal growth method of PAM-XIAMEN products is liquid-sealed straight pull method (LEC), vertical Bridgman method (VB), or vertical gradient solidification (VGF), which are current mainstream industrial growth methods. Here is a brief introduction for the GaAs single crystal growth method.
1. LEC for Gallium [...]
2021-06-22meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html
At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high [...]
2024-03-22meta-author