Test grade silicon wafers-6

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 5.0 ° 0.001 – 100 Ohmcm 150 ± 0.5 mm 675 ± 200 µm 100 20 100
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° > 0.3 Ohmcm 150 ± 0.5 mm 400 ± 50 µm 60 30 60
6 SSP Boron P+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 1° 0.010 – 0.020 Ohmcm 150 ± 0.5 mm 508 ± 15 µm 60
6 SSP Phosphorus N 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0 ° 4 – 8 Ohmcm 150 ± 0.2 mm 650 ± 50 µm 60 10 60
6 SSP Phosphorus N 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0 ° 0.75 – 5.00 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 10 50
6 SSP Phosphorus N 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0 ° 0.75 – 5.00 Ohmcm 150 ± 0.2 mm 675 ± 25 µm
6 SSP Antimony N+ 100 47,5 ± 2,5 011 ± 1 0.0 ± 1.0° 0.008 – 0.016 Ohmcm 150 ± 0.5 mm 550 ± 15 µm
6 SSP Antimony N+ 100 47,5 ± 2,5 011 ± 1 0.0 ± 1.0° 0.008 – 0.016 Ohmcm 150 ± 0.5 mm 400 ± 15 µm
6 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 4° towards [110] ± 0.5° 0.005-0.030 Ohmcm 150 ± 0.2 mm 1000 ± 20 µm 50 50
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.01 – 0.025 Ohmcm 150 ± 0.5 mm 1000 ± 30 µm 8
6 SSP Antimony N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° 0.01 – 0.02 Ohmcm 150 ± 0.5 mm 625 ± 15 µm 30
6 SSP Antimony N+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.01 – 0.020 Ohmcm 150 ± 0.5mm 625 ± 10 µm 40 5 40
6 SSP Antimony N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5° < 0.016 Ohmcm 150 ± 0.3 mm 300 ± 15 µm 25 10 60
6 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 1° towards [110] ± 0.25° 0.005-0.030 Ohmcm 150 ± 0.2 mm 750 ± 10 µm 50 50
6 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 4° towards [110] ± 0.25° 0.005-0.030 Ohmcm 150 ± 0.2 mm 750 ± 10 µm 50 50
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.005 – 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm
6 SSP Antimony N+ 111 57,5 ± 2,5 110 ± 1 3.0 ± 0.5 ° 8 – 17 mOhmcm 150.0 ± 0.2 mm 625 ± 15 µm 40 10 40
6 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 2° towards [110] ± 0.5° 0.005-0.030 Ohmcm 150 ± 0.2 mm 1000 ± 10 µm 50 50
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,30 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150.0 ± 0.2 mm 675 ± 15 µm 20 5 35
6 SSP Antimony N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5° < 0.016 Ohmcm 150 ± 0.3 mm 300 ± 15 µm 25 10 60
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 135 ± 5° °,   20 ± 2.5 mm 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150 ± 0.5 mm 525 ± 25 µm 50 5 50
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.005 – 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 40 10 25
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° < 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 6 55
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1   135 ±   5.0 °,  20.00 ±  2.5 mm 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150 ± 0.5 mm 525 ± 25 µm 38 12 38
6 SSP Antimony N+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.01 – 0.020 Ohmcm 150 ± 0.5mm 625 ± 10 µm
6 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 1° towards [110] ± 0.25° 0.005-0.030 Ohmcm 150 ± 0.2 mm 1000 ± 10 µm
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,30 0.0 ± 0.5° 0.005-0.020 Ohmcm 150.0 ± 0.2 mm 665-685 µm
6 SSP Antimony N+ 100 47,5 ± 2,5 011 ± 1 0.0 ± 0.5° 0.008 – 0.020 Ohmcm 150 ± 0.5 mm 625 ± 15 µm 4,5 50
6 SSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° < 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm
6 SSP Arsenic N+ 111 47,5 ± 2,5 110 ± 1 2.5 ± 0.5 ° <0.003 Ohmcm 150 ± 0.5 mm 625 ± 25 µm 60 15 60
6 SSP Arsenic N+ 111 47,5 ± 2,5 110 ± 1 2.5 ± 0.5 ° <0.004 Ohmcm 150 ± 0.5 mm 625 ± 25 µm 60 8 60
6 SSP Arsenic N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5 ° 1 – 4 mOhmcm 150 ± 0.2 mm 625 ± 15 µm 10 40
6 SSP Arsenic N+ 100 47,5 ± 1,0 110 ± 0,50 0.0 ± 0.5° 0.003 – 0.004 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm 30 10 30
6 SSP Arsenic N+ 111 47,5 ± 2,5 110 ± 1 2.5 ± 0.5 ° 0.002 – 0.004 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 30 5 45
6 SSP Arsenic N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5 ° 1 – 4 mOhmcm 150 ± 0.2 mm 625 ± 15 µm 10 40
6 SSP Arsenic N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5 ° 1 – 4 mOhmcm 150 ± 0.2 mm 625 ± 15 µm 10 40
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.003 – 0.005 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm 15 60
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.003 – 0.005 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 15 60
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0° 0.0020-0.0026 Ohmcm 150 ± 0.25 mm 508 ± 15 µm 15 40
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° < 0.0035 Ohmcm 150 ± 0.7 mm 440 ± 20 µm 90 17 90
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0° 0.0020-0.0026 Ohmcm 150 ± 0.25 mm 508 ± 15 µm 15 40
6 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 2.5 ± 0.5 ° <0.006 Ohmcm 150 ± 0.5 mm 675 ± 25 µm 60 15 60
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° < 0.0035 Ohmcm 150 ± 0.7 mm 440 ± 20 µm 90 17 90
6 SSP Arsenic N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5 ° 1 – 4 mOhmcm 150 ± 0.2 mm 625 ± 15 µm 10 40
6 SSP Arsenic N+ 100 47,5 ± 1,0 110 ± 0,50 0.0 ± 0.5° 0.002 – 0.003 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm 30 10 30
6 SSP Arsenic N+ 100 47,5 ± 1,0 110 ± 0,50 0.0 ± 0.5° 0.003 – 0.004 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm 30 10 30
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.003 – 0.008 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 45 5 45
6 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 2.5 ± 0.5 ° <0.006 Ohmcm 150 ± 0.5 mm 675 ± 25 µm 60 15 60
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0° 0.0020-0.003 Ohmcm 150 ± 0.25 mm 508 ± 15 µm 15 40
6 SSP Arsenic N+ 100 47,5 ± 2,5 0TT ± 1 0.0 ± 1.0 ° < 0.0035 Ohmcm 150.0 ± 0.2 mm 625 ± 25 µm 6 40
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 1.0° 0.0020-0.0026 Ohmcm 150 ± 0.25 mm 508 ± 15 µm 15 40

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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