2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
5-1 Introduction Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety [...]
5-3 Applications and Benefits of SiC Electronics Two of the most beneficial advantages that SiC-based electronics offer are in the areas of high-temperature and high-power device operation. The specific SiC device physics that enables high-temperature and high-power capabilities will be examined first, by several examples of revolutionary [...]
2-20.Linear Crystallographic Defects Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials is not perfect. The regular patterns are [...]
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2-19.Scratches A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
2-21.Usable Area A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
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