2-19.Scratches
A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
2018-06-28meta-author
2-30.Dopant
A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]
2018-06-28meta-author
Most analog signal conditioning and digital logic circuits are considered “signal level” in that individual transistors
in these circuits do not typically require any more than a few milliamperes of current and <20 V to function properly.
Commercially available silicon-on-insulator circuits can perform complex digital and [...]
2018-06-28meta-author
5-5-4 Patterned Etching of SiC for Device Fabrication
At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most
patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques.
The reader should consult References 122–124 which contain summaries [...]
2018-06-28meta-author
2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
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2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2018-06-28meta-author