Transmittance of Glass Wafer
Different Glass wafer material has different transmittance. The end user should check their detail application, and then choose corresponding glass wafer material, see below:
Transmission Rate of Jgs1 Glass Wafer
Transmission Rate of Jgs1 Glass Wafer
Transmittance of Glass Wafer
Transmission Rate of Jgs2 Glass [...]
2020-06-18meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 2″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. More about the indium antimonide crystal substrate specifications, please see the following part:
1. Indium Antimonide [...]
PAM XIAMEN offers GaAs(100) Si- doped crystal .
GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 2sp,cc: (1.07-3.89) x 10^18 /cm^3
GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 1sp,cc: (1.65-3.59) x 10^18 /cm^3 [...]
2019-04-22meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI Prime
p-type Si:B
[100]
3″
350
P/E/P
0.100-0.200
SEMI Prime
p-type Si:B
[100]
3″
400
P/P
0.015-0.016
SEMI Prime
p-type Si:B
[100]
3″
380
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
0.003-0.004
SEMI Prime
p-type Si:B
[100]
3″
100
P/P
0.0026-0.0030
SEMI Prime
p-type Si:B
[100]
3″
300
P/E
0.002-0.003
SEMI Prime
p-type Si:B
[100]
3″
525
P/E
0.0020-0.0027
SF @ 45°
p-type Si:B
[100]
3″
380
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[911]
3″
380
P/E
5-6
PF <110>
p-type Si:B
[111]
3″
380
P/E
18-21
SEMI Prime
p-type Si:B
[111]
3″
775
P/E
13-14
Prime, NO Flatst
p-type Si:B
[111]
3″
1000
P/E
10-20
Prime, NO Flatst
p-type Si:B
[111-4°]
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111]
3″
2000
P/P
8-9
SEMI Prime, Individual cst
p-type Si:B
[111]
3″
625
P/P
5-8
SEMI Prime
p-type Si:B
[111]
3″
2300
P/P
4-7
SEMI Prime, Individual [...]
2019-03-06meta-author
The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
2020-01-13meta-author
PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our [...]
2019-07-05meta-author