PAM XIAMEN offers GaAs (110) crystal.
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2″D x 2.8 mm, as cut
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
GaAs, (110) ori. un-doped, 5x6x2.0mm, 2sp
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
GaAs, VGF Grown (110) ori. [...]
2019-04-22meta-author
PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
PAM-XIAMEN Offers GaAs LED epitaxy wafer, which is AlGaInP LED (Red LED) stack on GaAs substrate. Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4” is on mass production in 2010. This new product [...]
2018-05-14meta-author
In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]
Actually, gallium oxide(Ga2O3) is not a new technology. Studies on gallium oxide applications in the field of power semiconductors are carried out by companies and research institutions all the time. And the gallium oxide material is mainly from Japan. With the development of Ga2O3 applications requirements becoming clearer, the performance requirements for high-power devices are getting [...]
2021-04-19meta-author
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
2inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 50.8mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns (the value is unchanged)
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author