PAM XIAMEN offers CeO2 Epi Film on YSZ.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
Epitaxial thin Film Composition
<100> CeO2
Epitaxial Film Thickness
40 nm +/- 10 nm
Growth method
Spin coating
Epitaxial FWHM
< 5 o
Substrate
<100>, YSZ, 10x10x0.5 mm, one side polished
CeO2 Film (40 nm one side) on YSZ [...]
2019-04-19meta-author
PAM XIAMEN offers Mg – Metal Foil.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg ) [...]
2019-05-08meta-author
Targeted Stress LPCVD Nitride
PAM XIAMEN offers Targeted Stress LPCVD Nitride
Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.
Please provid us with your application for an immediate quote.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-02-12meta-author
PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm.
3″ Si wafer with Thermal Oxide of thickness 1000A
Diameter: 3″
Diameter: 76.2±0.3mm
Thickness: 380±20μm
Orientation: <100>±1°
Type/dopant: N type/Phosphorus
Resistivity: 1-20Ωcm
Polishing: SSP
Primary Flat 22.5±2.5mm, (110)±1°
Surface roughness: <5A
For more information, please visit [...]
2019-08-22meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
600 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
340 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
>200
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
50
n- Si:P
36±4
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
5.4±0.7
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
66 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
78
n- Si:P
25 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/EOx
78
n- Si:P
20 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
17.5 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
60±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
70±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
22.5
p- Si:B
15±10%
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
6±0.9
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
38
p- [...]
2019-03-08meta-author
GaN-based light-emitting diode (LED) solid-state lighting has become the most important lighting technology in recent years because it has many advantages such as high conversion efficiency, long life, and eco-friendliness. Due to the lack of natural GaN substrates, GaN-based LED structures are usually fabricated [...]
2021-12-22meta-author