CZT Photon Counting Linear Array Detector

PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.

CZT Photon Counting Linear Array Detector

1. Specification of CZT Photon Counting Linear Array Detector

Size	16 pixels	32 pixels
Detector crystal	CdZnTe
Crystal Density	5.8g/cm3
Volume resistivity	>1010Ω.cm
Dimension	16.6×4.4mm2	12.9×4mm2
Thickness	2.0mm
Pixel array	16×1	32×1
Pixel size	0.9×2.0mm2	0.3×0.3mm2
Electrode material	Au
Standard working voltage	450V
Max. working voltage	600V
Single pixel leakage current	<0.1nA	<0.01nA
Max. counting rate	>0.7Mcps/mm2	>8.0Mcps/mm2
Operation temperature	15℃~35℃
Storage temperture	10℃~40℃
Storage humidity	20%-80%

2. CZT Linear Pixel Electrode Structured Detector Spectrum

3. CZT Photon Counting Detector Features

Long-time stability
High counting sensitivity
Room temperature working
High dose linearity
Low relaxation time

4. CZT Photon Counting Linear Array Detector based Applications

Defect detection
Public Security
DXA
Food safety detecting

For more information, please contact us email at [email protected] and [email protected].

2019-04-24

Related Posts

LD Bare Bar for [email protected] 3mm

PAM XIAMEN offers LD Bare Bar for [email protected] 3mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 50% Output Power: 200W Cavity Length:3mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy [...]

2020-07-17meta-author

Photographic Film Letterpress

PAM XIAMEN offers Photographic Film Letterpress Accuracy Index Accuracy/Grade Accuracy1 Accuracy2 Line Number/Aperture Rate 400dpi/50% 350dpi/50% Dot arrangement, Dot shape 45°/60°/75°/circle 45°/60°/75°/circle Dimensional Accuracy ±0.085mm ±0.085mm Substrate Thickness 1.50mm±0.15mm 1.50mm±0.15mm Cutting Accuracy ±1mm ±1mm Main application areas: LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-07-04meta-author

YIG single crystal substrate – Can’t Offer Temporarily

PAM XIAMEN offers YIG single crystal substrate. YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm Due to the rapid changes in the semiconductor wafer [...]

2019-05-21meta-author

W – Tungsten Polycrystalline Metal Substrates

PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates. General Properties for Tungsten Symbol W Atomic Number 74 Atomic Weight: 183.84 Crystal structure: BCC Lattice constant at room temperature: 0.316 nm Density: 19.25 g/cm3 Melting Point: 3422 °C Boiling Point: 5555 °C Tungsten (W) Polycrystalline Substrate: [...]

2019-05-20meta-author

The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]

2020-03-09meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.