PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices.
1. GaN on SiC HEMT Wafer for RF Application
No.1 GaN-on-SiC HEMT Epistructure
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
1300~2200 [...]
2019-05-17meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-08meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers Lithium Metal Foil.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Purity 99.9% Lithium
Melting Point 180.5 °C
Density 0.534 g/cm3
Color Silver
Dimension “16 mm x 0.6 mm
(diameter x thickness)”
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-08meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 525+/-25um.
Si, 150mm dia. SSP
525+/-25 thick
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm.
with 200A thermal OX and 1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-06-28meta-author
The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]
2022-03-25meta-author