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  • GaN HEMT Epitaxial Wafer

    GaN HEMT Epitaxial Wafer

    Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology, PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire…

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  • SiC Wafer Substrate (Silicon Carbide)

    SiC Wafer Substrate

    The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC…

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  • SiC Epitaxy

    SiC Epitaxy

    We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide…

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  • SiC Wafer Reclaim

    SiC Wafer Reclaim

    PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

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  • SIC Application

    SIC Application

    Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs device

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