GaAs (100) crystal-5

P type GaAs(Gallium Arsenide) Wafer

PAM XIAMEN offers p type GaAs(100) Zn-doped crystal Wafer.

1.Wafer List:

GF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, single side polished.
GaAs Wafer – Growing Method: VGF (100) Zn doped P-type, , 2″x0.5 mm, single side polished, (1-5) x 10^19 /cm^3
GaAs Wafer – Growing Method: VGF (100) Zn doped P-type, , 2″x0.5 mm, double side polished, (1-5) x 10^19 /cm^3
GaAs Wafer – Growing Method: VGF (100) P type Zn doped , 3″x0.625 mm, single side polished
GaAs Wafer – Growing Method: VGF (100) Zn doped Ptype, , 2″x0.35 mm, single side polished, CC: (1-5) x 10^19 /cm^3
GaAs Wafer – Growing Method: VGF (100), Zn doped, P-Type, 3″x0.5 mm, single side polished
GaAs Wafer – Growing Method: VGF (100) Zn doped P-type , 100mm x0.625 mm, double side polished, Carrier Concentration:(1.00-1.94) x 10^19 /cm^3
GaAs Wafer – Growing Method: VGF (100) Zn doped P type, , 100mm x0.5 mm, single side polished, Carrier Concentration:(1-5) x 10^19 /cm^3
GaAs Wafer – Growing Method: VGF (100) Zn doped P-type , 150mm x0.625 mm, double side polished, Carrier Concentration:(1.00-1.94) x 10^19 /cm^3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.Specification of P type GaAs wafer

p-GaAs wafer
type	p-type
Dopant	Zn
Carrier concentration/resistivity	(8 E18 – 5 E19) ohmcm
EPD	<=5000 1/cm²
Diameter	100 +-0.4 mm
Flat/Notch	EJ
Primary Flat	Ga-face (0-1-1)
P Flat Length	32.5 +- 2mm
Secondary Flat	90 +- 0.5° relative to primary flat
S Flat Length	18 +- 2mm
Orientation	(100) 6 +- 0.5° <111 B>
Thickness	450 +- 25 µm
Frontside	polished
Grade	epi ready
TTV	< = 10 µm
Bow	< = 10 µm
Warp	< = 10 µm
Backside	etched
Lasermarking	Frontside opposite major flat
Packing	single in alufoil

 

Remark: for Orientation, we can offer on axis or off axis such as (100) 6deg. toward <111 B>

For more information, send us email at [email protected] and [email protected]