Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
2012-05-21meta-author
GaN
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected] [...]
2019-07-04meta-author
25.4 (1 inch) Silicon Wafers
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, [...]
2019-02-15meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 1
0.0 ± 1.0°
1 – 100 Ohmcm
100 ± 0.3 mm
302 ± 4 µm
35
4
35
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 0,50
90 ± 5.0 °, [...]
2019-02-25meta-author
PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]
2020-11-24meta-author