We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows:
1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide
2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer:
4 inch Prime grade silicon,1-20 ohm [...]
Indium Antimonide (InSb) Single Substrates
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 3″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots.
1)2″InSb
Orientation：(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP
2)2″InSb
Orientation：(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 [...]
1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology
This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), [...]
What is silicon made of?
Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand.
First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out [...]
SiC Ingots
PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ [...]
2018-08-07meta-author
Flexible semiconductor Ge thin film grown on mica by van der Waals epitaxy. The film experiences no degradation in its electrical properties even after repeated bending. Credit: Aaron Littlejohn, Rensselaer Polytechnic Institute
Germanium, an elemental semiconductor, was the material of choice in the early history [...]
2018-05-08meta-author
