The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage [...]
2018-12-25meta-author
PAM XIAMEN offers Silicon Wafers.
Our clients often use the following silicon wafers for the above applications:
Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, [...]
2019-02-26meta-author
PAM XIAMEN offers Glass Substrates(Mo-Coated sodalime Glass and TiO2 Coated Sodalime Glass and ZnO Coated Sodalime Glass).
Mo-Coated sodalime Glass
Mo-coated Sodalime Glass, 100 mm(L) x 100 mm(W) x 1.1 mm thk
Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th [...]
2019-04-18meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm
FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm
FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm
FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs
FZ 2″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, (6 ingots: 154mm, 117mm, 143mm, 100mm, 101mm, 100mm)
FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 [...]
2019-03-08meta-author
PAM-XIAMEN offers 4 inch Blue LED Wafer
Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years.
“We have established the production process based [...]
