PAM-XIAMEN has silicon boule for sale, which is a raw material for semiconductor silicon device manufacturing, making high-power rectifiers, high-power transistors, diodes, switching devices, and etc. The monocrystalline silicon crystal with a basically complete lattice structure has a band gap of 1.11eV. Single crystalline silicon with different directions has different properties, and it is a good semiconducting material. The purity is required to reach 99.9999%, even more than 99.9999999%. Methods for silicon crystal growth are divided into Czochralski method (CZ), zone melting method (FZ) and epitaxy method. Czochralski method and zone melting method grow monocrystalline silicon rods, and epitaxial method grows monocrystalline silicon thin films. The most commonly used is the CZ method. Following is a sales list of single crystal silicon ingot for your reference:
1. Si Crystal List
| Ingot Number | Ingot Diameter | Type, Orientation | Ingot Length(mm) | Resistivity | Lifetime | Qty |
| PAM-XIAMEN-INGOT-01 | 104 | N(100) | 73 | 167000 | 1700 | 1 |
| PAM-XIAMEN-INGOT-02 | 103 | N(100) | 123 | >20000 | 1690 | 1 |
| PAM-XIAMEN-INGOT-09 | 103.8 | N111 | 170 | 14000 | — | 1 |
| PAM-XIAMEN-INGOT-60 | 103.3 | N111 | 90 | 15000 | — | 1 |
| PAM-XIAMEN-INGOT-61 | 103 | N111 | 80 | 18700 | — | 1 |
| PAM-XIAMEN-INGOT-62 | 105 | N100 | 165 | 810 | — | 1 |
| PAM-XIAMEN-INGOT-63 | MC200 | P110 | 253 | 0.355 | 2.82% | 1 |
| PAM-XIAMEN-INGOT-64 | MC200 | P110 | 255 | 0.363 | 3.03% | 1 |
| PAM-XIAMEN-INGOT-65 | MC200 | P110 | 215 | 0.355 | 3.66% | 1 |
| PAM-XIAMEN-INGOT-66 | MC200 | P110 | 271 | 0.289 | 2.48% | 1 |
| PAM-XIAMEN-INGOT-67 | MC200 | P110 | 243 | 0.313 | 3.51% | 1 |
| PAM-XIAMEN-INGOT-95 | 79 | N100 | 102 | 13000 | — | 1 |
| PAM-XIAMEN-INGOT-100 | 8″ | — | 300mm | — | — | 1 |
| PAM-XIAMEN-INGOT-101 | 8″ | — | 530mm | — | — | 1 |
| PAM-XIAMEN-INGOT-104 | A Side 6″ and B side 8″ | Ellipse | 90mm | — | — | 1 |
| PAM-XIAMEN-INGOT-105 | 240mm | punch a hole in the middle | 10mm | — | — | 4 |
| PAM-XIAMEN-INGOT-120 | 6″ | NP100 | 295 | ＞5000 | — | 1 |
| PAM-XIAMEN-INGOT-121 | 6″ | NP/N100 | 294 | ＞5000 | — | 1 |
| PAM-XIAMEN-INGOT-122 | 6″ | — | 47mm | — | — | 1 |
2. Single Silicon Crystal Industry Standards
The silicon crystal manufacturing process by PAM-XIAMEN meets the standards.
2.1 Classifications of Silicon Monocrystal
According to the production process, silicon single crystals are divided into two types of Czochralski silicon single crystals and zone-melted silicon single crystals, namely CZ and FZ (including neutron transmutation doping and gas phase doping).
Silicon crystals are divided into P-type and N-type according to the conductivity type.
Pure silicon crystal can be divided into (100), (111), (110) crystal according to the crystal orientation, and the commonly used silicon crystal orientation is (100) or (111).
Silicon monocrystals are divided into seven nominal diameter specifications: less than 50.8 mm, 50.8 mm, 76.2 mm, 100 mm, 125 mm, 150 mm and 200 mm and other non-nominal diameter specifications.
2.2 Resistivity and Carrier Lifetime of Czochralski Silicon Crystal
The resistivity range and radial resistivity change of Czochralski silicon single crystal should meet the relative requirements.
The carrier lifetime requirements of Czochralski silicon boule crystal shall be determined through negotiation between the supplier and the buyer.
2.3 Silicon Crystal Orientation and Deviation
The crystal orientation of silicon single crystal is <100> or <111>.
The crystal orientation deviation of Czochralski Si crystal should not be more than 2°.
The deviation of the crystal orientation of the molten silicon single crystal in the zone should not be greater than 5°.
2.4 Reference Surface or Cut of Silicon Crystal Ingot
The reference plane orientation, length or notch size of silicon ingot should meet the requirements of GB/T 12964.
2.5 Oxygen Content in Si Ingot Crystal
The interstitial oxygen content of the Czochralski silicon crystal should not be greater than 1.18X 1018 atoms/cm3, and the specific requirements are determined by the supplier and the buyer through negotiation. The oxygen content requirements of heavily doped Czochralski Si crystals shall be negotiated and determined by both parties.
The interstitial oxygen content of the zone molten P type or N type silicon crystal should not be greater than 1.96X 1016 atoms/cm3.
2.6 Carbon Content of Silicon Crystal Boule
The substituting carbon content of the silicon crystal by Czochralski should be no more than 5 X 1016 atoms/cm3. The carbon content requirements of the heavily doped monocrystalline silicon ingot shall be negotiated and determined by the supplier and the buyer.
The substituting carbon content of the zone molten silicon single crystal should not be more than 3 X 1016 atoms/cm3.
2.7 Silicon Crystal Integrity
The dislocation density of silicon single crystals should not be greater than 100/cm2, that is, no dislocations.
Silicon crystal should be free of star-shaped structures, hexagonal networks, vortices, holes and cracks, etc.
Heavily doped Si crystals with a resistivity of less than 0.02ohm-cm allow the observation of impurity fringes.
The micro-defect density and other defect requirements of single crystal silicon can be negotiated between the supplier and the buyer.
2.8 Inspection Method for Silicon
The measurement of Si crystal diameter and allowable deviation shall be carried out in accordance with the provisions of GB/T 14140.
The inspection of the conductivity type of silicon crystal shall be carried out in accordance with the provisions of GB/T 1550.
The measurement of the resistivity of silicon single crystal shall be carried out according to the regulations of GB/T 1551, or according to the regulations of GB/T 6616. The arbitration method shall be conducted in accordance with the provisions of GB/T 1551.
The measurement of the radial resistivity change of single crystal silicon shall be carried out in accordance with the provisions of GB/T 11073-2007.
The carrier lifetime measurement of monocrystalline silicon crystal is carried out according to the provisions of GB/T1553 or GB/T 26068, and the arbitration method is carried out according to the provisions of GB/T1553.
The inspection method for the resistivity fringes of silicon single crystal micro-zones shall be negotiated and determined by the supplier and the buyer.
The measurement of silicon crystal orientation and crystal orientation deviation shall be carried out in accordance with the provisions of GB/T1555 or negotiated between the supplier and the buyer.
The measurement of the reference plane orientation of silicon crystals shall be carried out in accordance with the provisions of GB/T 13388.
The measurement of the reference surface length of the silicon single product shall be carried out in accordance with the provisions of GB/T 13387.
The measurement of silicon crystal notch size shall be carried out in accordance with the regulations of GB/T 26067.
The measurement of silicon crystal oxygen content is carried out in accordance with the regulations of GB/T 1557. The oxygen content measurement method of heavily doped Czochralski silicon crystal is determined through negotiation between the supplier and the buyer.
The measurement of silicon single crystal carbon content is carried out in accordance with the provisions of GB/T1558. The carbon content measurement method of heavily doped Czochralski silicon crystal boule is determined through negotiation between the supplier and the buyer.
For more information, please contact us email at [email protected] and [email protected].