Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on a sapphire substrate. Mg diffusion, induced by threading dislocations, was greatly suppressed for the LEDs on the HVPE-grown GaN layer. The results clearly indicate that the HVPE-grown GaN substrate will be useful for achieving high-performance light-emitting devices.

Source: Journal of Crystal Growth

If you need more information about High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy，please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or [email protected].

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Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

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