PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
PAM2885 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188. |
PAM2886 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–5 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2887 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–10 ohm-cm | SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers |
PAM2888 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–10 ohm-cm | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee |
PAM2889 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–5 | SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches |
PAM2890 | p-type Si:B | [100-4° towards[110]] ±0.5° | 4″ | 525 | P/E | 1–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2891 | p-type Si:B | [100] | 4″ | 525 | P/E | 1–5 | SEMI Prime, 1Flat, Empak cst |
PAM2892 | p-type Si:B | [100] | 4″ | 525 | P/E | 1–20 | Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst |
PAM2893 | p-type Si:B | [100] | 4″ | 525 | NP/PN | 1–10 ohm-cm | SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides |
PAM2894 | p-type Si:B | [100] | 4″ | 525 | NOxP/POxN | 1–10 ohm-cm | SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst |
PAM2895 | p-type Si:B | [100-0.5°] | 4″ | 590 ±10 | E/E | 1–3 | SEMI Prime, 2Flats |
PAM2896 | p-type Si:B | [100] | 4″ | 1200 | P/P | 1–15 | SEMI Prime, 2Flats, Empak cst |
PAM2897 | p-type Si:B | [100] | 4″ | 1200 | P/P | 1–15 | Prime, 1Flat, Empak cst |
PAM2898 | p-type Si:B | [100] | 4″ | 2100 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers |
PAM2899 | p-type Si:B | [100] | 4″ | 3000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers |
PAM2900 | p-type Si:B | [100] | 4″ | 3000 | P/E | 1–30 | SEMI, 2Flats, Individual cst |
PAM2901 | p-type Si:B | [100] | 4″ | 3175 | P/P | 1–10 ohm-cm | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
PAM2902 | p-type Si:B | [100] | 4″ | 3175 | P/P | 1–10 ohm-cm | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
PAM2903 | p-type Si:B | [100] | 4″ | 3200 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers |
PAM2904 | p-type Si:B | [100] | 4″ | 4000 | P/P | 1-100 | SEMI Prime, 2Flats, Individual cst |
PAM2905 | p-type Si:B | [100] | 4″ | 890 ±15 | P/P | 0.5-10.0 | SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst |
PAM2906 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.1-0.2 | SEMI Prime, 2Flats, Empak cst |
PAM2907 | p-type Si:B | [100] | 4″ | 350 | P/E | 0.095-0.130 | SEMI Prime, 2Flats, Empak cst |
PAM2908 | p-type Si:B | [100-6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers |
PAM2909 | p-type Si:B | [100] | 4″ | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
PAM2910 | p-type Si:B | [100] | 4″ | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
PAM2911 | p-type Si:B | [100-4°] ±0.5° | 4″ | 380 ±10 | P/P | 0.01-0.02 | SEMI Prime, Empak cst, TTV<2μm |
PAM2912 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.01-0.02 | SEMI, 2Flats, Empak cst |
PAM2913 | p-type Si:B | [100] | 4″ | 525 | P/POx | 0.008-0.020 | SEMI Prime, 2Flats, Empak cst |
PAM2914 | p-type Si:B | [100] | 4″ | 300 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2915 | p-type Si:B | [100] | 4″ | 500 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |
PAM2916 | p-type Si:B | [100] | 4″ | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm |
PAM2917 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2918 | p-type Si:B | [100] | 4″ | 525 | BROKEN | 0.001-0.005 | Broken wafer (shattered into many pieces), 1Flat |
PAM2919 | p-type Si:B | [100] | 4″ | 800 | C/C | 0.001-0.005 | SEMI, 2Flats, Empak cst, With striation marks |
PAM2920 | p-type Si:B | [100] | 4″ | 2000 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers |
PAM2921 | p-type Si:B | [100] | 4″ | ? | P/P | ? | SEMI Test, 2Flats, Empak cst |
PAM2922 | p-type Si:B | [100] | 4″ | 375 | P/E | <0.0015 {0.00091-0.00099} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
PAM2923 | n-type Si:P | [100] | 4″ | 310 ±10 | P/P | 20-30 | SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee |
PAM2924 | n-type Si:P | [100] | 4″ | 350 | P/P | 20-23 | SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst |
PAM2925 | n-type Si:P | [100] | 4″ | 525 | P/E | 10–30 | SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers |
PAM2926 | n-type Si:P | [100] | 4″ | 5800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
PAM2927 | n-type Si:P | [100] | 4″ | 5800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
PAM2928 | n-type Si:P | [100-4° towards[111]] | 4″ | 525 | P/E | 43719 | SEMI Prime, 2Flats, Empak cst |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.