3-6. Edge Chips
Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
3-6. Edge Chips
Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
5-6-2 SiC RF Devices The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]
1-1.lattice parameter The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
5-5 SiC Device Fundamentals To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
5-4-4-3 SiC Epilayer Doping In-situ doping during CVD epitaxial growth is primarily accomplished through the introduction of nitrogen (usually) for n-type and aluminum (usually trimethyl- or triethylaluminum) for p-type epilayers . Some alternative dopants such as phosphorus and boron have also been investigated for the [...]
3-7. ID Correct and Major Wafer Flat Both should be readily discernible.
2-12.Edge Exclusion The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and [...]
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