PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2535
n–type Si:P
[100]
4″
350
P/P
20–23
SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
PAM2536
n–type Si:P
[100]
4″
525
P/E
10–30
SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
PAM2537
n–type Si:P
[100]
4″
5800
P/E
10–100
SEMI Prime, 2Flats, [...]
2019-02-19meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.
1. CZT Compton Imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
22.0×22.0 mm2
Thickness
15.0mm
Pixel size
1.38×1.38 mm2
Pixel center space
1.88mm
Pixel array
11×11
Electrode material
Au
Operation temperature
25℃-+40℃
Energy range
60KeV~2.6MeV
Energy resolution(22℃)
Average pixel <5%@662KeV
Storage temperture
10℃~40℃
Storage humidity
20%-80%
2. Spectrum of CZT Compton Imager
3. Features Compton Imaging Detector Based on CZT Crystal
Long-time stability
High energy [...]
2019-04-24meta-author
Reliability analysis of InGaN Blu-Ray laser diode
The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while [...]
2014-03-03meta-author
InGaN
PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
PAM XIAMEN offers Zero Diffraction Plate.
Si Single Crystal Zero Diffraction Plate for XRD
Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement
Zero Diffraction Plate for XRD: 17.8 Dia x1.0 t mm with Cavity 10 IDx0.1 mm, Si Crystal
Zero Diffraction Plate for [...]
2019-05-22meta-author