IV Test Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer.
Si wafer
Dia 2” x 260μm
FZ
(111)
Type n doped P
R > 300 ohm.cm
2 side spolished
With flats
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-01meta-author
Fabrication of GaN wafers for electronic and optoelectronic devices
The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
PAM XIAMEN offers PMNT Substrate.
PMNT (Lead Magnesium Niobate-Lead Titanate) is new Piezocrystal for Next-Generation Electromechanical Transducers. PAM XIAMEN supplies high quality PMNT crystal up to 25x25x mm in mass production.
PMNT Substrate (001) 10x10x0.25mm, one side polished
PMNT Substrate (001) 10x10x0.5mm, one side [...]
2019-05-14meta-author
PAM XIAMEN offers IV, III–V and II–VI compound semiconductors.
There are many III–V and II–VI compound semiconductors with high bandgaps. The only high bandgap materials in group IV are Diamond and Silicon Carbide (SiC).
Aluminum Nitride (AlN) can be used to fabricate ultraviolet LEDs with wavelengths [...]
2019-03-21meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-24meta-author