PAM XIAMEN offers 12 inch Si dummy wafer:
Surface:double side polished;
Thickness ≥750um;
V Notch(SEMI STD);
Slight scratch (with no stains or heavy/deep scratches);
About the Si dummy wafer
According to different application scenarios in the fab, silicon wafers can be divided into two categories:
1.Prime Wafer, which is directly used for [...]
2021-04-22meta-author
At present, Group III compound semiconductor materials, silicon carbide and oxide semiconductor materials are the mainly third-generation semiconductor materials. Among them, Group III compound semiconductor materials are commonly gallium nitride materials and aluminum nitride materials; oxide semiconductor materials mainly include zinc oxide, gallium oxide [...]
2021-04-06meta-author
Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2)
In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech [...]
2016-05-10meta-author
Light-emitting InGaN/GaN Heterojunction Bipolar Transistors
The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = [...]
2012-12-06meta-author
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um.
3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-07-04meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
1″
475 ±10
E/E
FZ >500 {1,900-2,400}
n-type Si:P
[111] ±0.5°
1″
280
P/P
FZ 2,000-10,000
TTV<5μm
Intrinsic Si:-
[100]
1″
320
P/E
FZ >20,000
Prime
Intrinsic Si:-
[100]
1″
500
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
1″
160
P/P
FZ >10,000
Prime, TTV<8μm
Intrinsic Si:-
[100]
0.5″
12700
C/C
FZ >10,000
a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:-
[111] ±0.5°
1″
500
P/P
FZ >15,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
1″
1000
P/E
FZ 14,000-30,000
Cassettes of 7, 6, 6 wafers
Intrinsic Si:-
[111] ±2°
1″
27870
C/C
FZ >10,000
Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type [...]
2019-03-08meta-author