PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q: Please let us know if you could supply below wafer, qty 25/50/300.
Gallium Arsenide wafers, P/P
150.00±0.25 mm) 6″Ø×650±25µm,
VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°,
u > 4,000cm²/Vs,
Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1,
TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm,
Certificate: obligatory, Sealed under nitrogen in single wafer cassette
A: Yes, will check the [...]
2018-09-13meta-author
Q:We request for the following items
1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm
2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide?
A: Sure.
2018-06-19meta-author
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm?
A: Sure, no problem
2018-06-19meta-author
Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1
2018-06-19meta-author