PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Pack: Packed in 1000 class plastic bag [...]
2019-04-17meta-author
LaAlO3 (Lanthanum Aluminate) substrate is available for. LaAlO3 substrate is commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics [...]
2019-03-12meta-author
Al2O3 (Sapphire)
PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter:
1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM
Al2O3- Sapphire Wafer, [...]
2019-04-16meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]