Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size? A:No problem, any size is workable.
Q: For GaN on sapphire, could you please let us know which side is epi-ready? A: Ga-face,epi-ready and N face is connecting to sapphire.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)? A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]
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