5-5-4 Patterned Etching of SiC for Device Fabrication
At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most
patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques.
The reader should consult References 122–124 which contain summaries [...]
2018-06-28meta-author
SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
2018-06-28meta-author
1-4.Density
The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
2018-06-28meta-author
5-5 SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
2018-06-28meta-author
Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
2018-06-28meta-author
1-8.Electrical Breakdown
The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that [...]
2018-06-28meta-author