PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2383
n–type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
PAM2384
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
PAM2385
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ [...]
2019-02-19meta-author
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author
PAM-NIS CZT radionuclide recognizer is compact and portable with following advantages:
1) The energy resolution is less than 1.8% at 662keV, which is higher than scintillator detectors;
2) The detector size is smaller than Ge detector, working at room temperature without cooling;
3) It can be recharged [...]
2023-07-07meta-author
PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows:
Wikipedia:
Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice [...]
2018-02-12meta-author
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 38%
Output Power: 250W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author