GaAs quantum well VCSEL wafer with an emission wavelength of 808nm is available for optical pumping. VCSEL (Vertical Cavity Surface Emitting Laser) is developed on the basis of gallium arsenide semiconductor materials. The VCSEL fabrication of devices has the advantages of small size, small [...]
2021-07-19meta-author
PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm
Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
Measurements on the spectroscopic performance of CdZnTe coplanar grid detectors
A performance study was performed for CdZnTe coplanar grid (CPG) detectors when used as γ-ray spectrometers. The detectors have the crystal volumes of 1, 1.6875 and 2.25 cm3, respectively. Time stability of each CdZnTe CPG detector [...]
Silicon Ingots -2
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
19.35
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
5.6
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
5.12
6″Ø ingot [...]
2019-02-15meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
381
P/E
0.085-0.115
SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
p-type Si:B
[110] ±0.3°
3″
381
P/E
0.0448-0.0672
SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
p-type Si:B
[110] [...]
2019-03-06meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author