PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-23meta-author
PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.
1. Charge Sensitive Pre-amplifier Chip Specifications Comparison
Brands
(PAM-01C)
Gremat(PAM-110)
Dimensions
24×15×3 mm3
22.7×21×3.4 mm3
Weight
5g
2.5g
Power
<0.3W
0.66W
Powered by
±12V
±12V
Operation temperature
-20℃-+40℃
-20℃-+40℃
Equivalent noise level
ENC:180e-
ENC:260e-
Falling [...]
2019-04-25meta-author
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows:
SiC-On-SiC Epi Wafer For Pin-Diodes
1. Specifications of SiC Epitaxy on Silicon Carbide Substrate
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: [...]
2020-08-04meta-author
As one of 5G semiconductor manufacturers, Xiamen Powerway Advanced Material Co., Ltd. can offer compound semiconductor materials with unique advantages in the physical properties, and the 5g compound semiconductor market of PAM-XIAMEN is enlarging. The semiconductor materials have experienced three stages of development:
the first stage is group [...]
2021-05-06meta-author
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.
Item
Parameter
Spec
Unit
1
Growth Method
CZ
2
Diameter
100+/-0.5
mm
3
Type-Dopant
P- Boron
4
Resistivity
0.002 – 0.003
ohm-cm
5
Resistivity Radial Variation
<10
%
6
Crystal Orientation
<111> 4 +/- 0.5
degree
7
Primary Flat
Orientation
Semi
degree
Length
Semi
mm
8
Secondary Flat
Orientation
Semi
degree
Length
semi
mm
9
Thickness
525 +/- 25
μm
10
TTV
≦10
μm
11
Bow
≦40
μm
12
Warp
≦40
μm
13
Front Surface
polished
14
Backside
etched
—
5000 +/-10% Angstoms SiO2
15
Surface Appearance
no Cratches, haze, edge chips, orange peel, defects,contamination
—
16
Edge [...]
2021-03-16meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author