PAM XIAMEN offers Si wafers.
Our clients often use the following spec for their soft lithography applications.
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
Not only can the above silicon wafers be used for soft lithography, our clients also use the wafers for PDMS micro-fluidic chip platforms [...]
2019-02-25meta-author
High-overtone bulk acoustic resonator (HBAR) combines the advantages of surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, providing high Q values, stable frequency operating range, and low frequency jitter noise, which can meet the needs of highly stable microwave signals. In addition, [...]
2023-11-15meta-author
Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application
The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel [...]
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[100]
6″
675
OxP/EOx
0.001-0.005
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick
p-type Si:B
[100]
6″
735
P/P
FZ >50
Prime, TTV<2μm
p-type Si:B
[100]
6″
650
P/P
FZ 8-13
SEMI Prime (57.5mm)
n-type Si:P
[100]
6″
475
P/P
FZ 60-75
SEMI Prime, MCC Lifetime>14,980μs, Lasermark
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
800 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
950 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI Prime (57.5mm)
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
2100
P/E
1-100
SEMI Prime, Manual Edges
p-type Si:B
[100]
4″
3000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
4″
3175
P/P
1-10
SEMI Prime, TTV<8μm
p-type Si:B
[100]
4″
3200
P/E
1-100
SEMI Prime, Sealed as group of 9 wafers
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
5000
P/E
1-100
Prime, NO Flats
p-type Si:B
[100]
4″
890 ±15
P/P
0.5-10.0
SEMI TEST (Scratches), TTV<8μm
p-type Si:B
[100] ±0.2°
4″
300
P/P
0.1-0.3
SEMI Prime
p-type Si:B
[100] ±1°
4″
490 ±5
P/P
0.1-1.0
SEMI Prime, TTV<0.8μm
p-type Si:B
[100]
4″
525
P/E
0.1-0.2
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.095-0.130
SEMI Prime
p-type [...]
2019-03-05meta-author
PAM XIAMEN offers Nd2Ga5O12 single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
(Cubic)
GGG
Gd3Ga5O12
YSGG
Y3Sc2Ga3O5
S-GGG(CaMgZr:GGG)
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
NGG
Nd3Ga5O12
GYSGG
Gd0.63Y2.37Sc2Ga3O12
GSGG
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 [...]
2019-05-14meta-author