PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique
A new single crystal silicon carbide (SiC) MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 µm thickness has been achieved over an oxidized silicon substrate using the proposed technique. [...]
2018-08-22meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
2100
P/E
1-100
SEMI Prime, Manual Edges
p-type Si:B
[100]
4″
3000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
4″
3175
P/P
1-10
SEMI Prime, TTV<8μm
p-type Si:B
[100]
4″
3200
P/E
1-100
SEMI Prime, Sealed as group of 9 wafers
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
5000
P/E
1-100
Prime, NO Flats
p-type Si:B
[100]
4″
890 ±15
P/P
0.5-10.0
SEMI TEST (Scratches), TTV<8μm
p-type Si:B
[100] ±0.2°
4″
300
P/P
0.1-0.3
SEMI Prime
p-type Si:B
[100] ±1°
4″
490 ±5
P/P
0.1-1.0
SEMI Prime, TTV<0.8μm
p-type Si:B
[100]
4″
525
P/E
0.1-0.2
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.095-0.130
SEMI Prime
p-type [...]
2019-03-05meta-author
Transmittance of Glass Wafer
Different Glass wafer material has different transmittance. The end user should check their detail application, and then choose corresponding glass wafer material, see below:
Transmission Rate of Jgs1 Glass Wafer
Transmission Rate of Jgs1 Glass Wafer
Transmittance of Glass Wafer
Transmission Rate of Jgs2 Glass [...]
2020-06-18meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author