PAM XIAMEN offers Zinc Oxide on Silicon.
The following wafers work
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2 layer on 4″ Silicon wafer
Dry Oxide layer thickness: 100 nm ( 2000A) +/-10%
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Note: customized oxide layer [...]
2019-02-26meta-author
PAM-XIAMEN is able to offer you high-performance silicon wafers, additional wafer information you can find in https://www.powerwaywafer.com/silicon-wafer.
Heat treatment refers to the heat treatment of silicon single crystals (or silicon wafers) for a certain period of time at a certain temperature and protective atmosphere, with [...]
2024-04-12meta-author
PAM XIAMEN offers Aluminum on Silicon Wafer.
Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm
Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm
Aluminum Film on Silicon Wafer, [...]
2019-04-26meta-author
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2841
Intrinsic Si:-
[100]
4″
300
P/E
FZ 16,000-20,000
SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
2019-02-22meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110]
2″
2000
P/P
1-10
1 F @ <1,-1,0>
p-type Si:B
[110]
2″
350
P/E
0.1-1.0
PF<111> SF 109.5°
p-type Si:B
[110]
2″
280
P/P
0.080-0.085
PF<111> SF 109.5°
p-type Si:B
[100]
2″
500
P/P
1,300-8,000
SEMI Prime
p-type Si:B
[100]
2″
500
P/P
1,300-2,600
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
FZ 510-1,200
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
~150
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
90-120
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
70-80
SEMI Prime
p-type Si:B
[100]
2″
1400
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
1500
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
6-8
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
3000
P/E
4.9-5.3
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
300
P/E
1-10
SEMI Prime
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime
p-type Si:B
[100]
2″
500
P/E
1-2
SEMI [...]
2019-03-07meta-author