Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]
2023-12-08meta-author
Physicists reveal material for high-speed quantum internet
Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT
Researchers from the Moscow Institute of Physics and Technology have rediscovered [...]
2018-07-25meta-author
Phonon Properties of SiC Wafer
Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on the phonon properties of crystal. Different crystal structures have slight different phonon
For more details, please refer to below publications:
https://www.nature.com/articles/s41467-018-04168-x
https://www.nature.com/articles/s41467-020-15767-y
Resonant nanostructures for highly confined and ultra-sensitive [...]
2020-09-21meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100).
2″ Diameter Wafer
2″ wafers (100)
2“ Undoped Ge (100)
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP [...]
2019-04-23meta-author
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range
It can be grown on GaAs substrate, GaSb (111)A substrate and [...]
2020-05-15meta-author
PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
6inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 152.4mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author