PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-10meta-author
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by [...]
2019-10-28meta-author
PAM XIAMEN offers 4″ Test Grade Silicon Wafer.
Can you quote the same silicon wafer but 100 wafer instead of 50 Need to be packed in 25 wafer pack with cleanroom paper separators
• 50 silicon wafers (reclaim or test) to serve as polish [...]
2019-06-28meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer
8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and [...]
2023-02-03meta-author
PAM XIAMEN offers Silver(Ag) on Si wafer .
Silver Film on Silicom Wafer ,Ag: 0.2 microns / ,Si(100) P-type R:1-20 ohm.cm
Silver Metallic Film
Film Deposition by DC Sputtering
Silver Thickness: 0.2 microns
Film Resistivity: N/A
Film Crystallinity: N/A
Roughness, RMS: 4.87 nm and < [...]
2019-04-29meta-author