PAM XIAMEN offers Graphene film on Ni/SiO2/Si.
Graphene is an allotrope of carbon, whose structure is one-atom-thick planar sheets of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. The term graphene was coined as a combination of graphite and the [...]
2019-05-06meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]
2018-08-14meta-author
PAM XIAMEN offers LSAT Crystal Substrates.
SPECIFICATIONS:
Growth method: Czochralski method
Crystal structure: Cubic
Lattice parameter: a = 3.868 A
Melt point (℃): 1840
Density: 6.74(g/cm3)
Hardness: 6.5(mohs)
Dielectric constants: 22
Thermal expansion: 10 x 10-6 /K
Available Size: 10×3,10×5,10×10,15×15,20×15,20×20,Ф15, Ф20,Ф1″ (1 inch),Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request.
Thickness: 0.5mm, 1.0mm
Polishing: Single or double, Epi-face Ra < 0.5 [...]
2019-03-13meta-author
PAM-XIAMEN offers 10*10mm2 SI (Semi-insulating) Freestanding GaN Substrate, which has a resistivity greater than 106 ohm-cm. Semi-insulating gallium nitride substrate with the advantages high critical breakdown electric field and good thermal stability are widely used in high-frequency and high-power devices. Following listed is one of the specifications:
1. [...]
2020-08-17meta-author