PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author
PAM XIAMEN offers Multilayer Graphene on Nickel foil: 2″”x2″” and Pyrolytic Graphite Substrate & Foam.
Isomolded Graphite Plate, Fine Ground, 0.125″T x 4″W x 4″L for Fuel Cell
Pyrolytic Graphite Substrate, C axis Textured, 10x10X0.5 mm, One Side Polished
Pyrolytic Graphite Substrate, C axis Textures, 1″W x [...]
2019-05-06meta-author
PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html.
The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap [...]
2024-03-26meta-author
PAM XIAMEN offers CdSe single crystal.
CdSe single crystal substrate, (0001) 10x10x1.0mm, 2sp Low Resistivity
CdSe single crystal
Orientation: (0001)
Type: N
Sizes: 10 x 10 +/- 0.1 mm
Thickness: 1.0 +/- 0.1 mm
Resistivities: < 1 ohm-cm
Surface Quality: two sides optical polished [...]
2019-04-19meta-author
PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]
2020-11-24meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
FZ 4,200-8,000
SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafers
n-type Si:P
[100] ±0.2°
4″
380 ±10
P/E
FZ >3,500
SEMI TEST , 1 Flat
n-type Si:P
[100]
4″
400 ±10
P/P
FZ 3,100-6,800
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
200
P/P
FZ >3,000
SEMI Prime, MCC Lifetime > 1,000μs,
n-type Si:P
[100]
4″
400
P/E
FZ 2,000-6,500
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[100]
4″
915 ±10
E/E
FZ 2,000-3,000
1Flat at [100]
n-type Si:P
[100]
4″
300
L/L
FZ 1,100-1,600
SEMI
n-type Si:P
[100] ±1°
4″
200 [...]
2019-03-05meta-author