PAM XIAMEN offers Mo-Coated Sodalime Glass Wafer. Here is a wafer list for your reference:
PAM210713-MO
Item
Length
Width
Thickness
Surface Finished
Mo-coating Sodalime Glass Wafer
100 mm
100 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Substrate
20 mm
15 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Sheet
25 mm
25 mm
1000 nm
Single side polished
Mo-coated Sodalime Glass Wafer
100 mm
100 [...]
2019-04-28meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-08-12meta-author
For single photon detection technology, in addition to the traditional InP/InGaAs SPAD, new material systems such as low noise material systems constructed from Sb based digital alloys, multi multiplication InP/InGaAs SPAD using ionization engineering, and InAlAs/InGaAs SPAD have also been developed. PAM-XIAMEN can provide InP [...]
2023-07-12meta-author
When it comes to choosing a material as the basic material for transistors in computers, the key matter we need to consider is resistance. Conductors have very low resistance and can conduct electricity easily; insulators have high resistance and cannot conduct electricity. For transistors, [...]
2022-06-21meta-author
PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″ size native semi-insulating GaN (SI GaN) substrates,which is on mass production in 2011. This new [...]
2012-07-09meta-author
The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
2022-04-11meta-author