Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item | Substrate | EPI | Comment | |||||
Size | Type | Res Ωcm | Surf. | Thick μm | Type | Res Ωcm | ||
PAM3197 | 6″Øx675μm | n- Si:P[100] | 0.001-0.002 | P/EOx | 0.016 | n- Si:P | 0.32-0.46 | n/n+ |
4″ Epitaxial Silicon Wafers
Item | Substrate | EPI | Comment | |||||
Size | Type | Res Ωcm | Surf. | Thick μm | Type | Res Ωcm | ||
PAM3198 | 4″Øx360μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 20 | n- Si:P | 360 – 440 | n/n+ |
PAM3199 | 4″Øx400μm | p- Si:B[111] | 0.01-0.10 | P/E | 6.5 | p- Si:B | 3.6±10% | P/P/P+ |
22±1.5 | p- Si:B | 300±50 | ||||||
PAM3200 | 4″Øx525μm | p- Si:B[111] | 0.01-0.02 | P/E | 8.1±1 | p- Si:B | 4.5±10% | P/P/P+ |
6.85±0.75 | p- Si:B | 0.75±0.15 | ||||||
PAM3201 | 4″Øx380μm | p- Si:B[111] | 0.008-0.020 | P/EOx | 10.5 | p- Si:B | 570±10% | p/p+ |
PAM3202 | 4″Øx440μm | p- Si:B[111] | 0.008-0.020 | P/E | 20 | p- Si:B | 0.15 ±10% | P/P+ |
PAM3203 | 4″Øx440μm | p- Si:B[111] | 0.008-0.020 | P/E | 20 | p- Si:B | 0.25±10% | P/P+ |
PAM3204 | 4″Øx525μm | p- Si:B[111] | 0.001-0.005 | P/E | 20 | p- Si:B | 175±10% | P/P+ |
PAM3205 | 4″Øx440μm | p- Si:B[111] | 0.008-0.020 | P/E | 21 | p- Si:B | 150 ±10% | P/P+ |
PAM3206 | 4″Øx380μm | p- Si:B[111] | 0.008-0.020 | P/EOx | 23 | p- Si:B | 200±10% | P/P+ |
PAM3207 | 4″Øx380μm | p- Si:B[111] | 0.008-0.020 | P/EOx | 23 | p- Si:B | 80±10% | P/P+ |
PAM3208 | 4″Øx440μm | p- Si:B[111] | 0.008-0.020 | P/E | 32 | p- Si:B | 600 ±10% | P/P+ |
PAM3209 | 4″Øx440μm | p- Si:B[111] | 0.01-0.02 | P/E | 32.5 | p- Si:B | 100±10% | P/P+ |
PAM3210 | 4″Øx380μm | p- Si:B[111] | 0.008-0.020 | P/EOx | 40 | p- Si:B | 550 ±10% | P/P+ |
PAM3211 | 4″Øx525μm | p- Si:B[111] | 0.01-0.02 | P/E | 14 | n- Si:P | 2.5±0.3 | N/P/P+ |
10 | p- Si:B | 15 | ||||||
PAM3212 | 4″Øx525μm | p- Si:B[111] | 0.01-0.02 | P/E | 14 | n- Si:P | 2.5±10% | n/p/p+ |
10 | p- Si:B | 9±10% | ||||||
PAM3213 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 20 | p- Si:B | 10±1.5 | P/N/N+ |
10 | n- Si:P | 5.5±0.7 | ||||||
PAM3214 | 4″Øx381μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 33 | p- Si:B | 12±10% | P/N/N+ |
10 | n- Si:P | 4±10% | ||||||
PAM3215 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 33±5 | p- Si:B | 12±2 | P/N/N+ |
9 | n- Si:P | 4 | ||||||
PAM3216 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 37 | p- Si:B | 35±10% | P/N/N+ |
16.5 | n- Si:P | 12.5±10% | ||||||
PAM3217 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 45 | p- Si:B | 13±10% | P/N/N+ |
7±1 | n- Si:P | 12±10% | ||||||
PAM3218 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 45 | p- Si:B | 14.5±10% | P/N/N+ |
7 | n- Si:P | 12±10% | ||||||
PAM3219 | 4″Øx525μm | n- Si:As[111] | 0.002-0.005 | P/E | 88 | p- Si:B | 80.5±10% | P/N/N+ |
88 | n- Si:P | 27±10% | ||||||
PAM3220 | 4″Øx380μm | n- Si:As[111] | 0.002-0.005 | P/E | 105 | p- Si:B | 0.0035±10% | P/N/N+ |
26 | n- Si:P | 5±10% | ||||||
PAM3221 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 10.15 | n- Si:P | 3.8±0.5 | N/N/N+ |
6.8±0.8 | n- Si:P | 0.55±0.15 | ||||||
PAM3222 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 16.5 | n- Si:P | 35 ±10% | N/N+ |
PAM3223 | 4″Øx508μm | n- Si:As[111] | 0.002-0.005 | P/E | 19±1.3 | n- Si:P | 25±5 | N/N/N+ |
54.5±3.6 | n- Si:P | 4.4 | ||||||
PAM3224 | 4″Øx380μm | n- Si:As[111] | 0.001-0.005 | P/EOx | 20 | n- Si:P | 270 ±10% | N/N+ |
PAM3225 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 0.09 ±10% | N/N+ |
PAM3226 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 90±10% | N/N+ |
PAM3227 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 0.07 ±10% | N/N+ |
PAM3228 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 0.13 ±10% | N/N+ |
PAM3229 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 0.15 ±10% | N/N+ |
PAM3230 | 4″Øx400μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 0.19 ±10% | N/N+ |
PAM3231 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 20 | n- Si:P | 65 ±10% | N/N+ |
PAM3232 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 20 | n- Si:P | 7±10% | N/N/N+ |
10 | n- Si:P | 2±0.4 | ||||||
PAM3233 | 4″Øx380μm | n- Si:As[111] | 0.001-0.005 | P/EOx | 21 | n- Si:P | 150 ±10% | N/N+ |
PAM3234 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 22.5 | n- Si:P | 12±10% | N/N/N+ |
28.5 | n- Si:P | 2±10% | ||||||
PAM3235 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 26 | n- Si:P | 18±10% | N/N/N+ |
11 | n- Si:P | 2±10% | ||||||
PAM3236 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 27 | n- Si:P | 220 ±10% | N/N+ |
PAM3237 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 27.5 | n- Si:P | >250 | N/N+ |
PAM3238 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 28 | n- Si:P | 165 ±10% | N/N+ |
PAM3239 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 28 | n- Si:P | 11±10% | N/N/N+ |
43689 | n- Si:P | 43468 | ||||||
PAM3240 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 28 | n- Si:P | 43688 | N/N/N+ |
43719 | n- Si:P | 43468 | ||||||
PAM3241 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 30 | n- Si:P | 11±10% | N/N/N/N+ |
15 | n- Si:P | 4±10% | ||||||
5 | n- Si:P | 1.5±10% | ||||||
PAM3242 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 39.5 | n- Si:P | 29±10% | N/N/N+ |
12 | n- Si:P | 4±10% | ||||||
PAM3243 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 41.5 | n- Si:P | >300 ±10% | N/N+ |
PAM3244 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 41.5 | n- Si:P | >200 | N/N+ |
PAM3245 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 43 | n- Si:P | 600 ±10% | N/N+ |
PAM3246 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 43 | n- Si:P | >200 | N/N+ |
PAM3247 | 4″Øx380μm | n- Si:As[111] | 0.004-0.008 | P/EOx | 43 | n- Si:P | 340 ±10% | N/N+ |
PAM3248 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 50 | n- Si:P | 36±4 | N/N/N+ |
15 | n- Si:P | 5.4±0.7 | ||||||
PAM3249 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 75 | n- Si:P | 66 ±10% | N/N+ |
PAM3250 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 78 | n- Si:P | 25 ±10% | N/N+ |
PAM3251 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/EOx | 78 | n- Si:P | 20 ±10% | N/N+ |
PAM3252 | 4″Øx525μm | n- Si:As[111] | 0.001-0.005 | P/E | 80 | n- Si:P | 17.5 ±10% | N/N+ |
PAM3253 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 80 | n- Si:P | 60±10% | N/N/N+ |
10 | n- Si:P | 2±1 | ||||||
PAM3254 | 4″Øx525μm | n- Si:As[111] | 0.0010-0.0035 | P/E | 80 | n- Si:P | 70±10% | N/N/N+ |
10 | n- Si:P | 2±1 | ||||||
PAM3255 | 4″Øx525μm | n- Si:Sb[111] | 0.008-0.020 | P/E | 22.5 | p- Si:B | 15±10% | P/N/N+ |
15 | n- Si:P | 6±0.9 | ||||||
PAM3256 | 4″Øx525μm | n- Si:Sb[111] | 0.008-0.020 | P/E | 38 | p- Si:B | 55±10% | P/N/N+ |
18 | n- Si:P | 10±10% | ||||||
PAM3257 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 14 | n- Si:P | 4.25 ±10% | N/N+ |
PAM3258 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 15 | n- Si:P | 90 ±10% | N/N+ |
PAM3259 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 18 | n- Si:P | 0.25 ±10% | N/N+ |
PAM3260 | 4″Øx400μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 20 | n- Si:P | 75 ±10% | N/N+ |
PAM3261 | 4″Øx400μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 20 | n- Si:P | 136 ±10% | N/N+ |
PAM3262 | 4″Øx400μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 20 | n- Si:P | 101 ±10% | N/N+ |
PAM3263 | 4″Øx400μm | n- Si:Sb[111] | 0.006-0.020 | P/E | 20 | n- Si:P | 300±10% | N/N+ |
PAM3264 | 4″Øx400μm | n- Si:Sb[111] | 0.006-0.020 | P/E | 21 | n- Si:P | 400±10% | N/N+ |
PAM3265 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 22.5 | n- Si:P | 12.5±10% | N/N+ |
PAM3266 | 4″Øx400μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 25 | n- Si:P | 0.08 ±10% | N/N+ |
PAM3267 | 4″Øx400μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 25 | n- Si:P | 0.04 ±10% | N/N+ |
PAM3268 | 4″Øx360μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 37.5 | n- Si:P | 270 ±10% | N/N+ |
PAM3269 | 4″Øx400μm | n- Si:Sb[111] | 0.006-0.020 | P/E | 37.5 | n- Si:P | 85±10% | N/N+ |
PAM3270 | 4″Øx525μm | n- Si:Sb[111] | 0.008-0.020 | P/E | 58 | n- Si:P | 60±10% | N/N/N/N+ |
15 | n- Si:P | 8±10% | ||||||
5 | n- Si:P | 3±10% | ||||||
PAM3271 | 4″Øx460μm | n- Si:Sb[111] | 0.007-0.020 | P/E | 60 | n- Si:P | 40.5±4.5 | N/N/N+ |
20 | n- Si:P | 10±2 | ||||||
PAM3272 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 60 | n- Si:P | 60 ±10% | N/N+ |
PAM3273 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 60 | n- Si:P | 58.75 ±10% | N/N+ |
PAM3274 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 70 | n- Si:P | 60 ±10% | N/N+ |
PAM3275 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 75 | n- Si:P | 125 ±10% | N/N+ |
PAM3276 | 4″Øx525μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 100 | n- Si:P | 420±10% | N/N+ |
3″ Epitaxial Silicon Wafers
Item | Substrate | EPI | Comment | |||||
Size | Type | Res Ωcm | Surf. | Thick μm | Type | Res Ωcm | ||
PAM3277 | 3″Øx508μm | p- Si:B[111] | 0.008-0.020 | P/E | 12.5 | p- Si:B | 2.35 | p+ |
140±10 | n- Si:P | 33.6 | ||||||
PAM3278 | 3″Øx381μm | n- Si:As[111-4°] | 0.001-0.005 | P/E | 5.5 | n- Si:P | 0.31 – 0.33 | n/n+ |
PAM3279 | 3″Øx525μm | n- Si:P[111] | 0.001-0.005 | P/E | 4.5 | n- Si:P | 1.1 – 1.4 | n/n+, Sealed in cassettes of 24 wafers |
PAM3280 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 5.5 | n- Si:P | 1.06±10% | N/N+ |
PAM3281 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 11 | n- Si:P | 17.5±10% | N/N+ |
PAM3282 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 16±10% | N/N+ |
PAM3283 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 2.1±10% | N/N+ |
PAM3284 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 1.7±10% | N/N+ |
PAM3285 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 1.3±10% | N/N+ |
PAM3286 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 1.3±10% | N/N+ |
PAM3287 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 12 | n- Si:P | 1.8±10% | N/N+ |
PAM3288 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 13 | n- Si:P | 1.35±10% | N/N+ |
PAM3289 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 15.5 | n- Si:P | 9.5±10% | N/N+ |
PAM3290 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 15.5 | n- Si:P | 9.5±10% | N/N+ |
PAM3291 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 18 | n- Si:P | 0.05±10% | N/N+ |
PAM3292 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 22 | n- Si:P | 4.8±10% | N/N+ |
PAM3293 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 22 | n- Si:P | 4±10% | N/N+ |
PAM3294 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 22 | n- Si:P | 4±10% | N/N+ |
PAM3295 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 28 | n- Si:P | 16.5±10% | N/N+ |
PAM3296 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 28.5 | n- Si:P | 4±10% | N/N+ |
PAM3297 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 28.5 | n- Si:P | 20±10% | N/N+ |
PAM3298 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 30 | n- Si:P | 4.5±10% | N/N+ |
PAM3299 | 3″Øx355μm | n- Si:As[111] | 0.001-0.005 | P/E | 34 | n- Si:P | 9.5±10% | N/N+ |
PAM3300 | 3″Øx355μm | n- Si:As[111] | 0.001-0.005 | P/E | 34 | n- Si:P | 12±10% | N/N+ |
PAM3301 | 3″Øx355μm | n- Si:As[111] | 0.001-0.005 | P/E | 34 | n- Si:P | 11±10% | N/N+ |
PAM3302 | 3″Øx355μm | n- Si:As[111] | 0.001-0.005 | P/E | 36 | n- Si:P | 4±10% | N/N+ |
PAM3303 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 37.5 | n- Si:P | 0.6±10% | N/N+ |
PAM3304 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 41 | n- Si:P | 25±10% | N/N+ |
PAM3305 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 42 | n- Si:P | 20.5±10% | N/N+ |
PAM3306 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 42.5 | n- Si:P | 17±10% | N/N+ |
PAM3307 | 3″Øx355μm | n- Si:As[111] | 0.001-0.005 | P/E | 52.5 | n- Si:P | 12.5±10% | N/N+ |
PAM3308 | 3″Øx381μm | n- Si:As[111] | 0.001-0.005 | P/E | 56 | n- Si:P | 12±10% | N/N+ |
PAM3309 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 70 | n- Si:P | 73±10% | N/N+ |
PAM3310 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 72 | n- Si:P | 12.5±10% | N/N+ |
PAM3311 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 73 | n- Si:P | 84±10% | N/N+ |
PAM3312 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 75 | n- Si:P | 13±10% | N/N+ |
PAM3313 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 75 | n- Si:P | 11±10% | N/N+ |
PAM3314 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 80 | n- Si:P | 12±10% | N/N+ |
PAM3315 | 3″Øx375μm | n- Si:As[111] | 0.001-0.005 | P/E | 85 | n- Si:P | 22.5 ±10% | N/N+ |
PAM3316 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 85 | n- Si:P | 19.5±10% | N/N+ |
PAM3317 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 85 | n- Si:P | 66±10% | N/N+ |
PAM3318 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 90 | n- Si:P | 41±10% | N/N/N+ |
18 | n- Si:P | 5±10% | ||||||
PAM3319 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 96 | n- Si:P | 30±10% | N/N+ |
PAM3320 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 100 | n- Si:P | 16 ±10% | N/N+ |
PAM3321 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 100 | n- Si:P | 12±10% | N/N+ |
PAM3322 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 100 | n- Si:P | 20±10% | N/N+ |
PAM3323 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 100 | n- Si:P | 21±10% | N/N+ |
PAM3324 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 135 | n- Si:P | 35±10% | N/N+ |
PAM3325 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 140 | n- Si:P | 31±10% | N/N+ |
PAM3326 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 145 | n- Si:P | 38±10% | N/N+ |
PAM3327 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 145 | n- Si:P | 25±10% | N/N+ |
PAM3328 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 150 | n- Si:P | 44±10% | N/N+ |
PAM3329 | 3″Øx508μm | n- Si:As[111] | 0.001-0.005 | P/E | 158 | n- Si:P | 67±10% | N/N+ |
PAM3330 | 3″Øx381μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 8 | n- Si:P | 0.63±10% | N/N+ |
PAM3331 | 3″Øx381μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 22.5 | n- Si:P | 0.07±10% | N/N+ |
PAM3332 | 3″Øx381μm | n- Si:Sb[111] | 0.005-0.020 | P/E | 30 | n- Si:P | 6.75±10% | N/N+ |
PAM3333 | 3″Øx330μm | n- Si:Sb[111] | 0.005-0.018 | P/E | 75 | n- Si:P | 40±10% | N/N/N+ |
25 | n- Si:P | 2.5±10% |
100mm P/B (100) 525μm 0.008-0.020 ohm-cm DSP
100±10 N/PHn 40 – 60 ohm-cm n/p+, Back-side polished after Epi deposition
certificate available
100mm P/B (111) 400μm .01-0.10 ohm-cm SSP
6.522±1.5 p- Si:B p- Si:B .6±10% 300±50 P/P/P+
76.2mm N/As (111) 0.001-0.005 ohm-cm SSP
75 n- Si:P 11±10% N/N+
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.