PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
Highlights
•The performance of colloidal silica and ceria based slurries on CMP of 6H-SiC substrates were evaluated.
•There was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries.
•For the ceria based slurries, a higher MRR was obtained, especially in strong [...]
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers TGG (Terbium Gallium Garnet).
TGG singlecrystal( Terbium Gallium Garne ) is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm.
TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
2019-05-20meta-author
Effects of sample processing on the performance of CdZnTe crystals
Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
~arc.sec
XRD(002)FWHM
~arc.sec
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
Al composition
20-30%
In composition
17% for InAlN
GaN cap
/
AlGaN/(In)AlN barrier
/
AlN interlayer
/
GaN channel
/
C [...]
2019-05-17meta-author