PAM XIAMEN offers 4″ Silicon Wafer.
Diameter | Type | Dopant | Growth method |
Orientation | Resistivity | Thickness | Surface | Grade |
100 | P | Boron | CZ | -100 | 1-20 | 43768 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 40-60 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 80-100 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 180-200 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 300-350 | P/E | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 300-350 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 350-400 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 375-425 | P/E | PRIME |
100 | P | Boron | CZ | -100 | .001-.005 | 450-500 | P/P | PRIME |
100 | P | Boron | CZ | -100 | .005-.02 | 450-500 | P/P | PRIME |
100 | P | Boron | FZ | -100 | >3000 | 450-500 | P/P | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 450-500 | P/P | PRIME |
100 | P | Boron | CZ | -100 | .001-.005 | 500-550 | P/E | PRIME |
100 | P | Boron | CZ | -100 | .005-.02 | 500-550 | P/E | PRIME |
100 | P | Boron | FZ | -100 | >3000 | 500-550 | P/E | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 500-550 | P/E | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 500-550 | P/E/DTOx | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 500-550 | P/E/Ni | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 500-550 | P/E/WTOx | |
100 | P | Boron | CZ | -100 | 1-20 | 950-1050 | P/E | PRIME |
100 | P | Boron | CZ | -100 | 1-20 | 950-1050 | P/P | PRIME |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.