1-5.Thermal Expansion Coefficient
Thermal expansion is the tendency of matter to change in volume in response to a change in temperature.
When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
2018-06-28meta-author
5-4-4-1 SiC Epitaxial Growth Processes
An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
2018-06-28meta-author
5-3-2 High-Power Device Operation
The high breakdown field and high thermal conductivity of SiC coupled with high operational junction
temperatures theoretically permit extremely high-power densities and efficiencies to be realized in SiC
devices. The high breakdown field of SiC relative to silicon enables the blocking voltage region [...]
2018-06-28meta-author
2-14.Masking Defects
also referred to as “Mound”
When one defect prevents the detection of another defect, the undetected defect is called the masked defect.
A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
2018-06-28meta-author
2-37.Test Grade
Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
2018-06-28meta-author
3-8. 3C Inclusions
Regions where step- ow was interrupted during epi layer growth. Typical regions are generally triangular although more rounded shapes are sometimes seen. Count once per occurrence. Two inclusions within 200 microns count as one.
2018-06-28meta-author